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STPS60L30CW PDF预览

STPS60L30CW

更新时间: 2024-11-25 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管PC局域网
页数 文件大小 规格书
4页 59K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS60L30CW 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-247AC包装说明:PLASTIC, TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180455Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-247Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:600 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS60L30CW 数据手册

 浏览型号STPS60L30CW的Datasheet PDF文件第2页浏览型号STPS60L30CW的Datasheet PDF文件第3页浏览型号STPS60L30CW的Datasheet PDF文件第4页 
®
STPS60L30CW  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 30 A  
30 V  
K
Tj (max)  
VF (max)  
150 °C  
0.38 V  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
LOW THERMAL RESISTANCE  
A2  
K
A1  
TO247  
DESCRIPTION  
Dual center tap Schottky rectifier suited for Switch  
Mode Power Supply and high frequency DC to DC  
converters.  
Packaged in TO247, this device is intended for  
use in low voltage, high frequency inverters,  
free-wheeling and polarity protection applications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
30  
V
IF(RMS)  
IF(AV)  
50  
A
A
RMS forward current  
30  
60  
Average forward current  
Tc = 130°C Per diode  
δ = 0.5  
tp = 10 ms Sinusoidal  
tp = 2 µs F = 1kHz square  
Per device  
IFSM  
IRRM  
Tstg  
600  
2
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Storage temperature range  
- 65 to + 150  
150  
°C  
Tj  
°C  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed: 2A  
1/4  

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