Datasheet > STPS60L15C

STPS60L15C

更新时间： 2024-09-22 23:35:19

品牌	Logo	应用领域
其他 - ETC		肖特基二极管
页数	文件大小	规格书
4页	60K
描述
LOW DROP OR-ING POWER SCHOTTKY DIODE

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中文翻译

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数据手册

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STPS60L15C 数据手册

STPS60L15CW

LOW DROP OR-ing POWER SCHOTTKY DIODE

MAJOR PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 30 A

15 V

Tj (max)

V_F(max)

125°C

0.33 V

FEATURES AND BENEFITS

■

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION AND REDUCED

HEATSINK SIZE

■

OPERATION JUNCTION TEMPERATURE: 125°C

REVERSE VOLTAGE SUITED TO OR-ing OF

3V, 5V and 12V RAILS

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

TO-247

Dual center tap schottky rectifier packaged in

TO-247 and suited for N+1 redundancy

operations, this device has an optimized forward

voltage drop to reduce the power losses in the

application.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

Average forward current

Tcase = 115°C Per diode

δ = 0.5

Per device

I_FSM

400

Surge non repetitive forward

current

tp = 10 ms Sinusoidal

I_RRM

I_RSM

P_ARM

T_stg

Peak repetitive reverse current

tp = 2µs F = 1kHz

Non repetitive peak reverse current tp = 100µs

24000

- 65 to + 150

125

Repetitive peak avalanche power

Storage temperature range

tp = 1µs Tj = 25°C

°C

V/µs

T_j

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 1A

1/4

12 3 4

中文翻译

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