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STPS4045CW PDF预览

STPS4045CW

更新时间: 2024-09-13 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
5页 62K
描述
POWER SCHOTTKY RECTIFIERS

STPS4045CW 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.29
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.63 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:220 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:45 V
最大反向电流:40000 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS4045CW 数据手册

 浏览型号STPS4045CW的Datasheet PDF文件第2页浏览型号STPS4045CW的Datasheet PDF文件第3页浏览型号STPS4045CW的Datasheet PDF文件第4页浏览型号STPS4045CW的Datasheet PDF文件第5页 
STPS4045CP/CW  
POWER SCHOTTKY RECTIFIERS  
MAIN PRODUCTS CHARACTERISTICS  
A1  
IF(av)  
VRRM  
2 x 20 A  
45 V  
K
A2  
Tj (max)  
VF (max)  
175 °C  
0.63 V  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLESWITCHING LOSSES  
EXTREMELYFAST SWITCHING  
LOW THERMAL RESISTANCE  
A2  
A2  
K
K
A1  
A1  
DESCRIPTION  
SOT-93  
STPS4045CP  
TO-247  
STPS4045CW  
Dual center tap Schottky rectifier suited for  
switchmode power supply and high frequency DC  
to DC converters.  
Packaged either in SOT-93 or TO-247 this device  
is intended for use in low voltage, high frequency  
inverters, free wheeling and polarity protection  
applications.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
IF(RMS)  
IF(AV)  
45  
V
A
A
Repetitivepeak reverse voltage  
30  
RMS forward current  
20  
40  
Average forward current  
Tc = 150°C  
δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
220  
1
A
A
Surge non repetitiveforward current tp = 10 ms sinusoidal  
RepetitivePeak reverse current  
tp = 2 µs square  
F = 1kHz  
IRSM  
Tstg  
Tj  
3
- 65 to + 175  
175  
A
°C  
Non repetitive peak reverse current  
Storage temperaturerange  
tp = 100 µs square  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runawayconditionfor a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed: 3B  
1/5  

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