Datasheet > STPS40L15CW_03

STPS40L15CW_03

更新时间： 2024-09-14 12:50:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
5页	83K
描述
LOW DROP OR-ing POWER SCHOTTKY DIODE

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中文翻译

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数据手册

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STPS40L15CW_03 数据手册

STPS40L15CW/CT

LOW DROP OR-ing POWER SCHOTTKY DIODE

MAJOR PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 20 A

15 V

Tj (max)

V_F(max)

125°C

0.33 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION AND REDUCED

HEATSINK SIZE

REVERSE VOLTAGE SUITED TO OR-ing OF

3V, 5V and 12V RAILS

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap schottky rectifier packaged in

TO-220AB and TO-247, this device is especially

intended for use as OR-ing diode in fault tolerant

power supply equipments.

TO-220AB

STPS40L15CT

TO-247

STPS40L15CW

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)

I_F(AV)

RMS forward current

Average forward current

Tcase = 140°C Total

δ = 1

Per diode

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

310

Surge non repetitive forward current tp = 10 ms Sinusoidal

Peak repetitive reverse current tp = 2 µs F = 1kHz

Non repetitive peak reverse current tp = 100 µs

13140

- 65 to + 150

125

Repetitive peak avalanche power

Storage temperature range

tp = 1µs Tj = 25°C

°C

V/µs

T_j

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 5A

1/5

12 3 4 5

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