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STPS2H100UF PDF预览

STPS2H100UF

更新时间: 2024-01-12 04:08:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管高压PC高电压电源
页数 文件大小 规格书
4页 48K
描述
100 V, 2 A SMA Flat, SMB Flat Power Schottky Rectifier

STPS2H100UF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.69其他特性:LOW LEAKAGE CURRENT
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.88 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
参考标准:AEC-Q101最大重复峰值反向电压:100 V
最大反向电流:1 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPS2H100UF 数据手册

 浏览型号STPS2H100UF的Datasheet PDF文件第2页浏览型号STPS2H100UF的Datasheet PDF文件第3页浏览型号STPS2H100UF的Datasheet PDF文件第4页 
STPS2H100  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 A  
100 V  
175°C  
0.70 V  
Tj (max)  
VF (max)  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
HIGH JUNCTION TEMPERATURE CAPABILITY  
GOOD TRADE OFF BETWEEN LEAKAGE CUR-  
RENT AND FORWARD VOLTAGE DROP  
LOW LEAKAGE CURRENT  
AVALANCHE CAPABILITY SPECIFIED  
DO-41  
DESCRIPTION  
Axial Power Schottky rectifier suited for Switch  
Mode Power Supply and high frequency  
DC/DC converters. Packaged in DO-41, this  
device is intended for use in low voltage, high  
frequency inverters and small battery  
chargers.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
100  
10  
Unit  
V
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
A
IF(AV)  
IFSM  
IRRM  
Average forward current  
TL = 120°C δ = 0.5  
2
A
Surge non repetitive forward current tp = 10 ms sinusoidal  
50  
A
Repetitive peak reverse current  
tp = 2 µs square F = 1kHz  
tp = 1µs Tj = 25°C  
1
A
PARM Repetitive peak avalanche power  
1500  
W
Tstg  
Tj  
Storage temperature range  
Maximum operating junction temperature *  
- 65 to + 175  
175  
°C  
°C  
V/µs  
dV/dt Critical rate of rise of reverse voltage  
10000  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
July 2003 - Ed: 2A  
1/4  

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