Datasheet > STPS2L30

STPS2L30

更新时间： 2024-11-14 23:35:19

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描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS2L30 数据手册

STPS2L30A

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 A

30 V

Tj (max)

V_F(max)

150 °C

0.375 V

FEATURES AND BENEFITS

LOW COST DEVICE WITH LOW DROP

FORWARD VOLTAGE FOR LESS POWER

DISSIPATION.

SMA

JEDEC DO-214AC

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH LEADS TO THE

HIGHEST YIELD IN THE APPLICATIONS.

HIGH POWER SURFACE MOUNT MINIATURE

PACKAGE.

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC

converters, freewheel diode and integrated circuit

latch up protection.

Packaged in SMA, this device is especially

intended for use in parallel with MOSFETs in

synchronous rectification.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

Average forward current

T_L= 120°C δ = 0.5

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs F = 1kHz square

tp = 100 µs square

tp = 1µs Tj = 25°C

1500

°C

V/µs

- 65 to + 150

150

Maximum operating junction temperature *

dV/dt

dPtot

Critical rate of rise of reverse voltage

10000

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 3A

1/5

12 3 4 5

中文翻译

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