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STPS2L30A PDF预览

STPS2L30A

更新时间: 2024-11-14 22:50:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管光电二极管PC
页数 文件大小 规格书
4页 60K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS2L30A 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.27
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180414Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes Moulded
Samacsys Footprint Name:SMASamacsys Released Date:2015-09-01 16:33:09
Is Samacsys:N其他特性:FREE-WHEELING DIODE
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.53 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:75 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

STPS2L30A 数据手册

 浏览型号STPS2L30A的Datasheet PDF文件第2页浏览型号STPS2L30A的Datasheet PDF文件第3页浏览型号STPS2L30A的Datasheet PDF文件第4页 
STPS2L30A  
®
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 A  
30 V  
Tj (max)  
VF (max)  
150 °C  
0.375 V  
FEATURES AND BENEFITS  
LOW COST DEVICE WITH LOW DROP  
FORWARD VOLTAGE FOR LESS POWER  
DISSIPATION.  
SMA  
JEDEC DO-214AC  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFF WHICH LEADS TO THE HIGHEST  
YIELD IN THE APPLICATIONS.  
HIGH POWER SURFACE MOUNT MINIATURE  
PACKAGE.  
DESCRIPTION  
Single Schottky rectifier suited to Switched Mode  
Power Supplies and high frequency DC to DC  
converters, freewheel diode and integrated circuit  
latch up protection.  
Packaged in SMA, this device is especially  
intended for use in parallel with MOSFETs in  
synchronous rectification.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
30  
Unit  
V
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
10  
A
δ
IF(AV)  
IFSM  
IRRM  
IRSM  
Tstg  
Average forward current  
TL = 120°C = 0.5  
2
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Storage temperature range  
tp = 10 ms Sinusoidal  
75  
A
µ
tp = 2 s F = 1kHz square  
1
1
A
µ
tp = 100 s square  
A
°
- 65 to + 150  
150  
C
C
°
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
µ
V/ s  
dV/dt  
10000  
dPtot  
dTj  
1
<
* :  
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
August 1999 - Ed: 2A  
1/4  

STPS2L30A 替代型号

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