STPS2L30AFN

更新时间： 2024-02-08 18:27:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管光电二极管 PC
页数	文件大小	规格书
4页	60K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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STPS2L30AFN 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

STPS2L30AFN 数据手册

STPS2L30A

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 A

30 V

Tj (max)

V_F(max)

150 °C

0.375 V

FEATURES AND BENEFITS

LOW COST DEVICE WITH LOW DROP

FORWARD VOLTAGE FOR LESS POWER

DISSIPATION.

SMA

JEDEC DO-214AC

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH LEADS TO THE HIGHEST

YIELD IN THE APPLICATIONS.

HIGH POWER SURFACE MOUNT MINIATURE

PACKAGE.

DESCRIPTION

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC

converters, freewheel diode and integrated circuit

latch up protection.

Packaged in SMA, this device is especially

intended for use in parallel with MOSFETs in

synchronous rectification.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

I_RRM

I_RSM

T_stg

Average forward current

T_L= 120°C = 0.5

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 s F = 1kHz square

tp = 100 s square

- 65 to + 150

150

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

V/ s

dV/dt

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

August 1999 - Ed: 2A

1/4

12 3 4

中文翻译

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