STPS2L25

更新时间： 2024-11-14 22:50:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
4页	55K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS2L25 数据手册

STPS2L25U

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 A

25 V

Tj (max)

V_F(max)

150 °C

0.375 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION

SMB

JEDEC DO-214AA

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH MEANS THE HIGHEST

EFFICIENCY IN THE APPLICATIONS

DESCRIPTION

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC con-

verters.

Packaged in SMB (JEDEC DO214-AA), this device

is especially intended for use in parallel with MOS-

FETs in synchronous rectification.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V_RRM

Repetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

I_RRM

I_RSM

T_stg

Average forward current

T_L= 125°C δ = 0.5

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Storage temperature range

tp = 10 ms Sinusoidal

tp=2 µs square F=1kHz

tp = 100 µs square

°C

- 65 to + 150

150

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

V/ s

dV/dt

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

June 1999 - Ed: 3A

1/4

12 3 4

中文翻译

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