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STPS2L25U PDF预览

STPS2L25U

更新时间: 2024-01-14 10:57:00
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管光电二极管功效PC
页数 文件大小 规格书
4页 55K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS2L25U 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.66
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180413Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Other
Samacsys Footprint Name:SMBSamacsys Released Date:2015-07-22 14:41:32
Is Samacsys:N应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.35 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:25 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS2L25U 数据手册

 浏览型号STPS2L25U的Datasheet PDF文件第2页浏览型号STPS2L25U的Datasheet PDF文件第3页浏览型号STPS2L25U的Datasheet PDF文件第4页 
STPS2L25U  
®
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 A  
25 V  
Tj (max)  
VF (max)  
150 °C  
0.375 V  
FEATURES AND BENEFITS  
VERY LOW FORWARD VOLTAGE DROP FOR  
LESS POWER DISSIPATION  
SMB  
JEDEC DO-214AA  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFF WHICH MEANS THE HIGHEST  
EFFICIENCY IN THE APPLICATIONS  
DESCRIPTION  
Single Schottky rectifier suited to Switched Mode  
Power Supplies and high frequency DC to DC con-  
verters.  
Packaged in SMB (JEDEC DO214-AA), this device  
is especially intended for use in parallel with MOS-  
FETs in synchronous rectification.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
25  
Unit  
V
VRRM  
Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
10  
A
IF(AV)  
IFSM  
IRRM  
IRSM  
Tstg  
Average forward current  
TL = 125°C δ = 0.5  
2
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp=2 µs square F=1kHz  
tp = 100 µs square  
75  
A
1
1
A
A
°C  
- 65 to + 150  
150  
°
C
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
µ
V/ s  
dV/dt  
10000  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed: 3A  
1/4  

STPS2L25U 替代型号

型号 品牌 替代类型 描述 数据表
SMBYW01-200 STMICROELECTRONICS

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