Datasheet > STL115N10F7AG

STL115N10F7AG

更新时间： 2024-11-30 14:58:19

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
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描述
汽车级N沟道100 V、0.005 Ohm典型值、107 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

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STL115N10F7AG 数据手册

STL115N10F7AG

Automotive-grade N-channel 100 V, 5 mΩ typ., 107 A,

STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Features

R_DS(on)

max

Order code

V_DS

I_D

P_TOT

STL115N10F7AG 100 V

6 mΩ

107 A 136 W



AEC-Q101 qualified

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

115N10F7

Package

Packaging

STL115N10F7AG

PowerFLAT™ 5x6

Tape and reel

December 2016

DocID029841 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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