Datasheet > STL120N4F6AG

STL120N4F6AG

更新时间： 2024-11-28 14:57:51

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意法半导体 - STMICROELECTRONICS		/
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描述
汽车级N沟道40 V、2.9 mOhm典型值、55 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

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STL120N4F6AG 数据手册

STL120N4F6AG

Automotive-grade N-channel 40 V, 2.9 mΩ typ., 55 A

STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STL120N4F6AG

40 V

3.6 mΩ

55 A



AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Wettable flank package

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

Table 1: Device summary

Order code

Marking

120N4F6

Package

Packaging

STL120N4F6AG

PowerFLAT™ 5x6

Tape and reel

March 2017

DocID027498 Rev 4

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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