Datasheet > STL120N8F7

STL120N8F7

更新时间： 2024-11-28 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	831K
描述
N沟道80 V、3.7 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

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STL120N8F7 数据手册

STL120N8F7

Datasheet

N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET

in a PowerFLAT 5x6 package

Features

DS(on)

max.

TOT

Order code

STL120N8F7

80 V

4.8 mΩ

120 A

140 W

•

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

PowerFLAT 5x6

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.

Top View

S(1, 2, 3)

AM15540v2

Product status link

STL120N8F7

Product summary

Order code

STL120N8F7

Marking

Package

Packing

120N8F7

PowerFLAT 5x6

Tape and reel

DS10754 - Rev 6 - February 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...16

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