Datasheet > STL11N65M5

STL11N65M5

更新时间： 2024-11-30 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	1036K
描述
N沟道650 V、0.475 Ohm典型值、8.5 A MDmesh M5功率MOSFET，PowerFLAT 5x5 HV封装

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STL11N65M5 数据手册

STL11N65M5

N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ M5

Power MOSFET in a PowerFLAT™ 5x5 package

Datasheet

production data

Features

Order code

V_DS@ T_{j max.}R_DS(on)max

710 V 0.530 Ω

I_D

STL11N65M5

8.5 A

• Extremely low R_DS(on)

• Low gate charge and input capacitance

• Excellent switching performance

• 100% avalanche tested

PowerFLAT^TM5x5

Applications

• Switching applications

Description

Figure 1. Internal schematic diagrams

This device is an N-channel Power MOSFET

based on MDmesh™ M5 innovative vertical

process technology combined with the well-

known PowerMESH™ horizontal layout. The

resulting product offers extremely low on-

resistance, making it particularly suitable for

applications requiring high power and superior

efficiency.

D(5, 6, 11, 12)

D 11

D 12

6 D

5 D

G(10)

S(2, 3, 4, 7, 8, 9)

Pin 1

Top View

identification

AM15540v5

Table 1. Device summary

Marking Package

Order code

STL11N65M5

Packaging

11N65M5

PowerFLAT

™

5x5

Tape and reel

October 2014

DocID026330 Rev 2

1/14

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...14

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