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STL128DN PDF预览

STL128DN

更新时间: 2024-11-27 06:14:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
14页 422K
描述
High voltage fast-switching NPN power transistor

STL128DN 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STL128DN 数据手册

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STL128DN  
High voltage fast-switching NPN power transistor  
Features  
TAB  
High voltage capability  
Low spread of dynamic parameters  
Very high switching speed  
3
3
Large RBSOA  
2
2
1
1
Integrated antiparallel collector-emitter diode  
TO-220  
TO-220FP  
TAB  
Applications  
Electronic ballast for fluorescent lighting  
3
1
Flyback and forward single transistor low  
power converters  
TO-252 (DPAK)  
Description  
Figure 1.  
Internal schematic diagram  
The device is manufactured using high voltage  
multi epitaxial planar technology for high switching  
speeds and medium voltage capability. It uses a  
cellular emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining the wide RBSOA. The device is  
designed for use in lighting applications and low  
cost switch-mode power supplies.  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
TO-220  
Packaging  
STL128DN  
L128DN  
L128DNFP  
LD128DN  
Tube  
Tube  
STL128DNFP  
TO-220FP  
DPAK  
STLD128DNT4  
Tape and reel  
October 2009  
Doc ID 13984 Rev 3  
1/14  
www.st.com  
14  

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