Datasheet > STL120N10F8

STL120N10F8

更新时间： 2024-11-28 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	628K
描述
N-沟道增强模式标准级100V，最高4.6mohm，125A STripFET F8功率MOSFET（采用PowerFLAT 5x6封装）

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STL120N10F8 数据手册

STL120N10F8

Datasheet

N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A

STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features

DS(on)

max.

Order code

STL120N10F8

100 V

4.6 mΩ

125 A

•

MSL1 grade

175 °C operating temperature

100% avalanche tested

PowerFLAT 5x6

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an

enhanced trench gate structure.

Top View

S(1, 2, 3)

GADG09062022

It ensures very low on-state resistance while reducing internal capacitances and gate

charge for faster and more efficient switching.

Product status link

STL120N10F8

Product summary

Order code

Marking⁽¹⁾

Package

STL120N10F8

120N10F8

PowerFLAT 5x6

Tape and reel

Packing

1. For engineering samples marking, see

Section 3.3 PowerFLAT 5x6 marking

information.

DS13899 - Rev 2 - January 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

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