5秒后页面跳转
STL100NHS3LL PDF预览

STL100NHS3LL

更新时间: 2024-11-27 06:14:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 236K
描述
N-channel 30V - 0.0032Ω - 22A - PowerFLAT™ (6x5) STripFET™ Power MOSFET plus monolithic Schottky

STL100NHS3LL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-XDSO-N5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
雪崩能效等级(Eas):1800 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.0057 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XDSO-N5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):88 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

STL100NHS3LL 数据手册

 浏览型号STL100NHS3LL的Datasheet PDF文件第2页浏览型号STL100NHS3LL的Datasheet PDF文件第3页浏览型号STL100NHS3LL的Datasheet PDF文件第4页浏览型号STL100NHS3LL的Datasheet PDF文件第5页浏览型号STL100NHS3LL的Datasheet PDF文件第6页浏览型号STL100NHS3LL的Datasheet PDF文件第7页 
STL100NHS3LL  
N-channel 30V - 0.0032- 22A - PowerFLAT™ (6x5)  
STripFET™ Power MOSFET plus monolithic Schottky  
Preliminary Data  
Features  
Type  
VDSS  
RDS(on)  
ID  
STL100NHS3LL  
30V  
< 0.004222A(1)  
1. This value is rated according to Rthj-pcb  
Optimal R  
x Qg trade-off @ 4.5V  
DS(on)  
Reduced switching losses  
PowerFLAT™(6x5)  
Reduced conduction losses  
Improved junction-case thermal resistance  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
This product utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology  
and a proprietary process for integrating a  
monolithic Schottky diode. The new Power  
MOSFET is optimized for the most important  
demanding synchronous switch function in DC-  
DC converter for Computer and Telecom.  
Table 1.  
Order code  
STL100NHS3LL  
Device summary  
Marking  
Package  
Packaging  
L100NHS3LL  
PowerFLAT™ (6 x 5)  
Tape & reel  
September 2007  
Rev 1  
1/9  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
9

STL100NHS3LL 替代型号

型号 品牌 替代类型 描述 数据表
BSC0904NSI INFINEON

功能相似

n-Channel Power MOSFET
STSJ100NHS3LL STMICROELECTRONICS

功能相似

N-channel 30V - 0.0032ohm - 20A - PowerSO-8 STripFET III Power MOSFET plus monolithic scho

与STL100NHS3LL相关器件

型号 品牌 获取价格 描述 数据表
STL105N8F7AG STMICROELECTRONICS

获取价格

Automotive N-channel 80 V, 5.6 mΩ typ., 95 A,
STL10DN15F3 STMICROELECTRONICS

获取价格

N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double
STL10LN80K5 STMICROELECTRONICS

获取价格

N沟道800 V、0.59 Ohm典型值、6 A MDmesh K5功率MOSFET,Po
STL10N3LLH5 STMICROELECTRONICS

获取价格

N沟道30 V、0.015 Ohm、9 A PowerFLAT(TM) 3.3x3.3 S
STL10N60M6 STMICROELECTRONICS

获取价格

N沟道600 V、550 mOhm典型值、5.5 A MDmesh M6功率MOSFET,
STL10N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.85 Ohm典型值、4.5 A MDmesh M2功率MOSFET,
STL110N10F7 STMICROELECTRONICS

获取价格

N沟道100 V、5 mOhm典型值、107 A STripFET F7功率MOSFET,
STL110N4F7AG STMICROELECTRONICS

获取价格

汽车级N沟道40 V、2.1 mOhm典型值、108 A STripFET F7功率MOS
STL115N10F7AG STMICROELECTRONICS

获取价格

汽车级N沟道100 V、0.005 Ohm典型值、107 A STripFET F7功率M
STL117N4LF7AG STMICROELECTRONICS

获取价格

汽车级N沟道40 V、8 mOhm典型值、15 A STripFET F7功率MOSFET