Datasheet > STL10DN15F3

STL10DN15F3

更新时间： 2024-11-29 12:27:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	1900K
描述
N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

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STL10DN15F3 数据手册

STL10DN15F3

N-channel 150 V, 0.20 Ω typ., 2.8 A STripFET™ III Power MOSFET

in a PowerFLAT™ 5x6 double island package

Datasheet — production data

Features

V_DS

T_Jmax

R_DS(on)

max

Order code

I_D

STL10DN15F3

150 V

<0.22 Ω

2.8 A

■ Improved die-to-footprint ratio

■ Very low profile package (1 mm max)

■ Very low thermal resistance

■ Low on-resistance

PowerFLAT^TM5x6

double island

Applications

Figure 1.

Internal schematic diagram

■ Switching applications

Description

This device is an N-channel enhancement mode

Power MOSFET produced using

STMicroelectronics’ STripFET™ III technology,

which is specifically designed to minimize on-

resistance and gate charge to provide superior

switching performance.

Table 1.

Order code

STL10DN15F3

Device summary

Marking

Package

Packaging

10DN15F3

PowerFLAT™ 5x6 double island

Tape and reel

October 2012

Doc ID 023781 Rev 1

1/14

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...14

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