是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-252AA |
包装说明: | DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.73 |
Is Samacsys: | N | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 220 ns |
标称接通时间 (ton): | 19 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGD3NB60KD | ETC |
获取价格 |
N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT | |
STGD3NB60KT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGD3NB60M | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT | |
STGD3NB60MT4 | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT | |
STGD3NB60S | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V DPAK Power MESH IGBT | |
STGD3NB60SD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V DPAK Power MESH IGBT | |
STGD3NB60SD_04 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT | |
STGD3NB60SD-1 | STMICROELECTRONICS |
获取价格 |
N-channel 3 A, 600 V low drop IGBT | |
STGD3NB60SDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V DPAK POWERMESH IGBT | |
STGD3NB60ST4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V DPAK Power MESH IGBT |