生命周期: | Obsolete | 零件包装代码: | TO-252AA |
包装说明: | TO-252, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 5.75 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGD3NC60HD | STMICROELECTRONICS |
获取价格 |
暂无描述 | |
STGD3NC60HDT4 | STMICROELECTRONICS |
获取价格 |
10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 | |
STGD3NC60HT4 | STMICROELECTRONICS |
获取价格 |
10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 | |
STGD4M65DF2 | STMICROELECTRONICS |
获取价格 |
650 V、4 A沟槽栅场截止低损耗M系列IGBT | |
STGD5H60DF | STMICROELECTRONICS |
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600 V、5 A高速沟槽栅场截止H系列IGBT | |
STGD5NB120SZ | STMICROELECTRONICS |
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N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT | |
STGD5NB120SZ-1 | STMICROELECTRONICS |
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N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT | |
STGD5NB120SZT4 | STMICROELECTRONICS |
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N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT | |
STGD6M65DF2 | STMICROELECTRONICS |
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650 V、6 A沟槽栅场截止低损耗M系列IGBT | |
STGD6NC60H | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT |