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STGD3NC60H PDF预览

STGD3NC60H

更新时间: 2024-11-26 15:53:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管功率控制
页数 文件大小 规格书
8页 149K
描述
10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3

STGD3NC60H 技术参数

生命周期:Obsolete零件包装代码:TO-252AA
包装说明:TO-252, DPAK-3针数:3
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5.75 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

STGD3NC60H 数据手册

 浏览型号STGD3NC60H的Datasheet PDF文件第2页浏览型号STGD3NC60H的Datasheet PDF文件第3页浏览型号STGD3NC60H的Datasheet PDF文件第4页浏览型号STGD3NC60H的Datasheet PDF文件第5页浏览型号STGD3NC60H的Datasheet PDF文件第6页浏览型号STGD3NC60H的Datasheet PDF文件第7页 
STGD3NC60H  
N-CHANNEL 3A - 600V DPAK  
Very Fast PowerMESH™ IGBT  
TARGET SPECIFICATION  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
V
I
C
CES  
CE(sat)  
(Max) @25°C @100°C  
STGD3NC60HT4  
600 V < 2.5 V 6 A  
LOWER ON-VOLTAGE DROP (V  
)
cesat  
OFF LOSSES INCLUDE TAIL CURRENT  
LOWER C /C RATIO  
HIGH FREQUENCY OPERATION  
NEW GENERATION PRODUCTS WITH  
TIGHTER PARAMETER DISTRIBUTION  
RES IES  
3
1
DPAK  
DESCRIPTION  
Using the latest high voltage technology based on  
a patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs, the Pow-  
Figure 2: Internal Schematic Diagram  
erMESH IGBTs, with outstanding performances.  
The suffix "H" identifies a family optimized for high  
frequency applications in order to achieve very  
high switching performances (reduced tfall) man-  
taining a low voltage drop.  
APPLICATIONS  
HIGH FREQUENCY INVERTERS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
MOTOR DRIVERS  
Table 2: Order Code  
PART NUMBER  
MARKING  
PACKAGE  
PACKAGING  
STGD3NC60HT4  
GD3NC60H  
DPAK  
TAPE & REEL  
Rev. 1  
February 2005  
1/8  
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice  

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