Datasheet > STGD3NB60SD_04

STGD3NB60SD_04

更新时间： 2024-11-23 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
9页	310K
描述
N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT

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中文翻译

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数据手册

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STGD3NB60SD_04 数据手册

STGD3NB60SD

N-CHANNEL 3A - 600V - DPAK

PowerMESH™ IGBT

TYPE

CES

CE(sat)

STGD3NB60SD

600 V

< 1.5 V

3 A

■

HIGH INPUT IMPEDANCE (VOLTAGE

DRIVEN)

■

VERY LOW ON-VOLTAGE DROP (V

HIGH CURRENT CAPABILITY

INTEGRATED WHEELING DIODE

)

cesat

DPAK

OFF LOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

INTERNAL SCHEMATIC DIAGRAM

™

PowerMESH IGBTs, with outstanding

performances. The suffix “S” identifies a family

optimized to achieve minimum on-voltage drop for

low frequency applications (<1kHz).

APPLICATIONS

■

MOTOR CONTROL

GAS DISCHARGE LAMP

STATIC RELAYS

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

PACKAGING

STGD3NB60SDT4

GD3NB60SD

DPAK

TAPE & REEL

May 2004

1/9

12 3 4 5 6 7...9

中文翻译

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与STGD3NB60SD_04相关器件

型号	品牌	获取价格	描述	数据表
STGD3NB60SD-1	STMICROELECTRONICS	获取价格	N-channel 3 A, 600 V low drop IGBT
STGD3NB60SDT4	STMICROELECTRONICS	获取价格	N-CHANNEL 3A - 600V DPAK POWERMESH IGBT
STGD3NB60ST4	STMICROELECTRONICS	获取价格	N-CHANNEL 3A - 600V DPAK Power MESH IGBT
STGD3NC60H	STMICROELECTRONICS	获取价格	10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3
STGD3NC60HD	STMICROELECTRONICS	获取价格	暂无描述
STGD3NC60HDT4	STMICROELECTRONICS	获取价格	10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3
STGD3NC60HT4	STMICROELECTRONICS	获取价格	10A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3
STGD4M65DF2	STMICROELECTRONICS	获取价格	650 V、4 A沟槽栅场截止低损耗M系列IGBT
STGD5H60DF	STMICROELECTRONICS	获取价格	600 V、5 A高速沟槽栅场截止H系列IGBT
STGD5NB120SZ	STMICROELECTRONICS	获取价格	N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT