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STD2NC60T4 PDF预览

STD2NC60T4

更新时间: 2024-11-24 21:21:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
9页 281K
描述
2A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

STD2NC60T4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:compliant
风险等级:5.62雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):2 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):8 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD2NC60T4 数据手册

 浏览型号STD2NC60T4的Datasheet PDF文件第2页浏览型号STD2NC60T4的Datasheet PDF文件第3页浏览型号STD2NC60T4的Datasheet PDF文件第4页浏览型号STD2NC60T4的Datasheet PDF文件第5页浏览型号STD2NC60T4的Datasheet PDF文件第6页浏览型号STD2NC60T4的Datasheet PDF文件第7页 
STD2NC60  
N-CHANNEL 600V - 3.3- 2A DPAK / IPAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD2NC60  
600V  
< 3.6Ω  
2A  
TYPICAL R (on) = 3.3Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
3
2
1
1
DPAK  
IPAK  
DESCRIPTION  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
600  
GS  
V
Drain-gate Voltage (R = 20 k)  
600  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±30  
V
I
Drain Current (continuos) at T = 25°C  
2
A
D
C
I
Drain Current (continuos) at T = 100°C  
1.3  
A
D
C
I
( )  
Drain Current (pulsed)  
8
60  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.48  
4
W/°C  
V/ns  
°C  
°C  
dv/dt(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I 2A, di/dt 100A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
January 2001  
1/9  

STD2NC60T4 替代型号

型号 品牌 替代类型 描述 数据表
STD2NC60 STMICROELECTRONICS

完全替代

N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK Powe

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