Datasheet > STD2NC50T4

STD2NC50T4

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	166K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.2A I(D) \| TO-252AA

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数据手册

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STD2NC50T4 数据手册

STD2NC50

STD2NC50-1

- 2.2A DPAK/IPAK

N-CHANNEL 500V - 3

Ω

PowerMesh II MOSFET

TYPE

DS(on)

DSS

STD2NC50

STD2NC50-1

500 V

< 4 Ω

2.2 A

■

TYPICAL R (on) = 3 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

IPAK

DPAK

DESCRIPTION

The PowerMESH II is the evolution of the first

generation of MESH OVERLAY . The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

500

±30

2.2

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

1.4

(1)

Drain Current (pulsed)

8.8

Total Dissipation at T = 25°C

TOT

Derating Factor

0.36

W/°C

V/ns

°C

dv/dt

Peak Diode Recovery voltage slope

Storage Temperature

stg

–60 to 150

150

Max. Operating Junction Temperature

°C

(•)Pulse width limited by safe operating area

(1)I ≤ 2.2A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

May 2001

1/10

12 3 4 5 6 7...10

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STD2NK70Z	STMICROELECTRONICS	获取价格	N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET