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STD25NE03L PDF预览

STD25NE03L

更新时间: 2024-02-18 01:33:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 93K
描述
N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET

STD25NE03L 数据手册

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STD25NE03L  
N - CHANNEL 30V - 0.019 - 25A - TO-251/TO-252  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD25NE03L  
30 V  
< 0.025 Ω  
25 A  
TYPICAL RDS(on) = 0.019 Ω  
100% AVALANCHE TESTED  
LOW GATE CHARGE  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
DESCRIPTION  
1
1
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS IN HIGH  
PERFORMANCE VRMs  
AUTOMOTIVE ENVIRONMENT(INJECTION,  
ABS, AIR-BG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
20**  
18**  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
I
DM()  
Drain Current (pulsed)  
100  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
45  
W
Derating Factor  
0.3  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(**) Value limited only by the package  
1/9  
March 1999  

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