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STB9NB50 PDF预览

STB9NB50

更新时间: 2024-11-26 22:26:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 95K
描述
N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

STB9NB50 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
雪崩能效等级(Eas):520 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):8.6 A最大漏极电流 (ID):8.6 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):34.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB9NB50 数据手册

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STB9NB50  
N - CHANNEL ENHANCEMENT MODE  
Power MESH MOSFET  
TYPE  
VDSS  
RDS(on)  
< 0.85 Ω  
ID  
STB9NB50  
500 V  
8.6 A  
TYPICAL RDS(on) = 0.75 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
VERY LOW INTRINSIC CAPACITANCE  
GATE CHARGE MINIMIZED  
3
2
1
LOW LEAKAGE CURRENT  
APPLICATION ORIENTED  
I2PAK  
TO-262  
CHARACTERIZATION  
FOR SMD D2PAK VERSION CONTACT  
SALES OFFICE  
(suffix ”-1”)  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTER FOR WELDING  
EQUIPMENT AND UNINTERRUPTABLE  
POWER SUPPLY (UPS)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
500  
± 30  
8.6  
V
A
ID  
5.4  
A
I
DM()  
34.4  
125  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
1.0  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4.5  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/8  
March 1998  

STB9NB50 替代型号

型号 品牌 替代类型 描述 数据表
IRF840ASPBF VISHAY

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