5秒后页面跳转
SPB04N60C3 PDF预览

SPB04N60C3

更新时间: 2024-11-26 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
14页 304K
描述
Cool MOS™ Power Transistor

SPB04N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:7.89Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):130 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):4.5 A最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):13.5 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPB04N60C3 数据手册

 浏览型号SPB04N60C3的Datasheet PDF文件第2页浏览型号SPB04N60C3的Datasheet PDF文件第3页浏览型号SPB04N60C3的Datasheet PDF文件第4页浏览型号SPB04N60C3的Datasheet PDF文件第5页浏览型号SPB04N60C3的Datasheet PDF文件第6页浏览型号SPB04N60C3的Datasheet PDF文件第7页 
SPP04N60C3, SPB04N60C3  
SPA04N60C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
650  
0.95  
4.5  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
I
D
P-TO220-3-31  
P-TO263-3-2  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
3
High peak current capability  
Improved transconductance  
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP04N60C3  
SPB04N60C3  
SPA04N60C3  
P-TO220-3-1 Q67040-S4366  
P-TO263-3-2 Q67040-S4407  
P-TO220-3-31 Q67040-S4413  
04N60C3  
04N60C3  
04N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
4.5  
2.8  
4.5  
2.8  
C
1)  
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
13.5  
130  
13.5  
130  
A
mJ  
p
jmax  
E
AS  
I =3.4, V =50V  
D
DD  
2)  
jmax  
E
Avalanche energy, repetitive t limited by T  
0.4  
0.4  
AR  
AR  
I =4.5A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
AR  
4.5  
±20  
±30  
50  
4.5  
±20  
±30  
31  
A
V
AR  
jmax  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-10-02  

SPB04N60C3 替代型号

型号 品牌 替代类型 描述 数据表
IRF840ASTRLPBF VISHAY

功能相似

Power MOSFET
IRF840ASPBF VISHAY

功能相似

Power MOSFET
IRF840SPBF VISHAY

功能相似

Power MOSFET

与SPB04N60C3相关器件

型号 品牌 获取价格 描述 数据表
SPB04N60C3_07 INFINEON

获取价格

Cool MOS Power Transistor
SPB04N60S5 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPB04N60S5_07 INFINEON

获取价格

Cool MOS™ Power Transistor Feature New revolu
SPB04N60S5ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Me
SPB05-1R0 TDK

获取价格

DC-DC Regulated Power Supply Module, 1 Output, 5W, Hybrid
SPB05-2R0 TDK

获取价格

DC-DC Regulated Power Supply Module, 1 Output, 10W, Hybrid
SPB0703 SUPERWORLD

获取价格

SMD POWER INDUCTORS
SPB0703100MZF-11 SUPERWORLD

获取价格

SMD POWER INDUCTORS
SPB0703100MZF-12 SUPERWORLD

获取价格

SMD POWER INDUCTORS
SPB0703100MZF-13 SUPERWORLD

获取价格

SMD POWER INDUCTORS