Datasheet > SPB04N60S5_07

SPB04N60S5_07

更新时间： 2024-11-27 06:13:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	359K
描述
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

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中文翻译

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数据手册

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SPB04N60S5_07 数据手册

SPB04N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

0.95

4.5

Ω

DS(on)

• Ultra low gate charge

PG-TO263

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

Package

Ordering Code

Marking

04N60S5

SPB04N60S5

PG-TO263

Q67040-S4201

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

4.5

2.8

T = 100 °C

Pulsed drain current, t limited by T

jmax

D puls

130

Avalanche energy, single pulse

I = 3.4 A, V = 50 V

jmax

0.4

4.5

Avalanche energy, repetitive t limited by T

I = 4.5 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.4

2007-02-14

12 3 4 5 6 7...11

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