Datasheet > STB9NK80Z

STB9NK80Z

更新时间： 2024-11-28 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	775K
描述
汽车级N沟道800 V、1.5 Ohm典型值、5.2 A SuperMESH功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB9NK80Z 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	12 weeks	风险等级：	1.71
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STB9NK80Z 数据手册

STB9NK80Z

Datasheet

Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH

Power MOSFET in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB9NK80Z

800 V

1.8 Ω

5.2 A

•

AEC-Q101 qualified

100% avalanche tested

Gate charge minimized

D²

PAK

Very low intrinsic capacitance

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01475V1

This high-voltage device is a Zener-protected N-channel Power MOSFET developed

using the SuperMESH technology by STMicroelectronics, an optimization of the well-

established PowerMESH. In addition to a significant reduction in on-resistance, this

device is designed to ensure a high level of dv/dt capability for the most demanding

applications.

Product status link

STB9NK80Z

Product summary

Order code

Marking

STB9NK80Z

B9NK80Z

Package

Packing

D²PAK

Tape and reel

DS9606 - Rev 3 - October 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...17

中文翻译

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