Datasheet > STB9NB50T4

STB9NB50T4

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	89K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8.6A I(D) \| TO-263AB

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STB9NB50T4 数据手册

STB9NB50

N-CHANNEL 500V - 0.75

Ω

- 8.6A D PAK

STripFET POWER MOSFET

DS(on)

TYPE

DSS

STB9NB50

500 V

<0.85 Ω

8.6 A

■

TYPICAL R (on) = 0.75 Ω

EXTREMELY HIGHT dv/dt CAPABILITY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100 C

VERY LOW INTRINSIC CAPACITANCE

GATE CHARGE MINIMIZED

D PAK

TO-263

(suffix“T4”)

LOW LEAKAGE CURRENT

APPLICATION ORIENTED

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

This Power Mosfet is the latest development of

STMicroelectronis unique ”Single Feature Size ” strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

remarkable

manufacturing

reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLY (SMPS)

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

500

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

500

DGR

Gate- source Voltage

± 30

8.6

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

5.4

(•)

Drain Current (pulsed)

34.4

125

Total Dissipation at T = 25°C

tot

Derating Factor

1.0

W/°C

V/ns

°C

dv/dt (2)

Peak Diode Recovery voltage slope

Storage Temperature

4.5

stg

–60 to 150

Max. Operating Junction Temperature

150

(•)Pulse width limited by safe operating area.

(2) I ≤9A, di/dt ≤200A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

November 2000

1/8

12 3 4 5 6 7 8

中文翻译

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