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STB9NK60ZT4 PDF预览

STB9NK60ZT4

更新时间: 2024-11-01 22:26:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
13页 583K
描述
N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

STB9NK60ZT4 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:1.71
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180104Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:D2PAK_STD_STSamacsys Released Date:2015-11-09 14:24:38
Is Samacsys:N雪崩能效等级(Eas):235 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB9NK60ZT4 数据手册

 浏览型号STB9NK60ZT4的Datasheet PDF文件第2页浏览型号STB9NK60ZT4的Datasheet PDF文件第3页浏览型号STB9NK60ZT4的Datasheet PDF文件第4页浏览型号STB9NK60ZT4的Datasheet PDF文件第5页浏览型号STB9NK60ZT4的Datasheet PDF文件第6页浏览型号STB9NK60ZT4的Datasheet PDF文件第7页 
STP9NK60Z - STP9NK60ZFP  
STB9NK60Z - STB9NK60Z-1  
N-CHANNEL 600V - 0.85- 7A TO-220/FP/D2PAK/I2PAK  
Zener-Protected SuperMESH™Power MOSFET  
TYPE  
V
DSS  
R
I
D
Pw  
DS(on)  
< 0.95  
< 0.95 Ω  
< 0.95 Ω  
< 0.95 Ω  
STP9NK60Z  
STP9NK60ZFP  
STB9NK60Z  
STB9NK60Z-1  
600 V  
600 V  
600 V  
600 V  
7 A  
7 A  
7 A  
7 A  
125 W  
30 W  
125 W  
125 W  
3
2
1
TYPICAL R (on) = 0.85 Ω  
DS  
TO-220  
TO-220FP  
EXTREMELY HIGH dv/dt CAPABILITY  
IMPROVED ESD CAPABILITY  
100% AVALANCHE RATED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
3
1
3
2
1
2
2
I PAK  
D PAK  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
ORDERING INFORMATION  
SALES TYPE  
STP9NK60Z  
STP9NK60ZFP  
STB9NK60Z  
MARKING  
P9NK60Z  
PACKAGE  
TO-220  
PACKAGING  
TUBE  
P9NK60ZFP  
B9NK60Z  
TO-220FP  
TUBE  
2
TUBE  
D PAK  
2
STB9NK60ZT4  
STB9NK60Z-1  
B9NK60Z  
TAPE & REEL  
TUBE  
D PAK  
2
B9NK60Z-1  
I PAK  
June 2002  
1/13  

STB9NK60ZT4 替代型号

型号 品牌 替代类型 描述 数据表
STB6NK60ZT4 STMICROELECTRONICS

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N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2
STB14NK60ZT4 STMICROELECTRONICS

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N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power

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