Datasheet > STB12N60DM2AG

STB12N60DM2AG

更新时间： 2023-12-20 18:44:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	417K
描述
Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package

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STB12N60DM2AG 数据手册

STB12N60DM2AG

Datasheet

Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2

Power MOSFET in a D²PAK package

Features

TAB

@ T max.

max.

Order code

DS(on )

STB12N60DM2AG

650 V

430 mΩ

10 A

•

AEC-Q101 qualified

D²PAK

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

Description

NG1D2TS3Z

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status

STB12N60DM2AG

Product summary

Order code

Marking

STB12N60DM2AG

12N60DM2

Package

Packing

D²PAK

Tape and reel

DS13374 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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