Datasheet > STB12NM50ND_09

STB12NM50ND_09

更新时间： 2024-01-25 19:24:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
16页	1028K
描述
N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

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STB12NM50ND_09 数据手册

STB12NM50ND

STD12NM50ND, STF12NM50ND

N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET

(with fast diode) in D²PAK, DPAK, TO-220FP

Features

Type

V_DSS(@Tjmax) R_DS(on)max I_D

STB12NM50ND

STD12NM50ND

STF12NM50ND

550 V

0.38 Ω

11 A

■ 100% avalanche tested

D²PAK

DPAK

TO-220FP

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

FDmesh™ technology combines the MDmesh™

features with an intrinsic fast-recovery body

diode. The resulting product has reduced on-

resistance and fast switching commutations,

making it especially suitable for bridge topologies

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where low t is required.

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Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB12NM50ND

STD12NM50ND

STF12NM50ND

12NM50ND

D²PAK

DPAK

Tape and reel

Tube

TO-220FP

June 2009

Doc ID 14936 Rev 2

1/16

www.st.com

12 3 4 5 6 7...16

中文翻译

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