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STB12NM50T4 PDF预览

STB12NM50T4

更新时间: 2024-02-09 18:04:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 409K
描述
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

STB12NM50T4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.07其他特性:AVALANCHE RATED
雪崩能效等级(Eas):400 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB12NM50T4 数据手册

 浏览型号STB12NM50T4的Datasheet PDF文件第2页浏览型号STB12NM50T4的Datasheet PDF文件第3页浏览型号STB12NM50T4的Datasheet PDF文件第4页浏览型号STB12NM50T4的Datasheet PDF文件第5页浏览型号STB12NM50T4的Datasheet PDF文件第6页浏览型号STB12NM50T4的Datasheet PDF文件第7页 
STP12NM50 - STP12NM50FP  
STB12NM50 - STB12NM50-1  
N-CHANNEL 550V @ Tj -0.30- 12A TO-220/FP/D²/I²PAK  
max  
Zener-Protected SuperMESH™MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
DSS  
R
I
D
DS(on)  
(@Tj  
)
max  
STB12NM50  
STB12NM50-1  
STP12NM50  
STP12NM50FP  
550 V  
550 V  
550 V  
550 V  
< 0.35  
< 0.35 Ω  
< 0.35 Ω  
< 0.35 Ω  
12 A  
12 A  
12 A  
12 A  
3
3
2
2
1
1
TYPICAL R (on) = 0.30  
DS  
TO-220FP  
TO-220  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
100% AVALANCHE TESTED  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
3
1
3
2
1
2
2
D PAK  
I PAK  
Figure 2: Internal Schematic Diagram  
DESCRIPTION  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizon-  
tal layout. The resulting product has an  
outstanding low on-resistance, impressively high  
dv/dt and excellent avalanche characteristics. The  
adoption of the Company’s proprietary strip tech-  
nique yields overall dynamic performance that is  
significantly better than that of similar competi-  
tion’s products.  
APPLICATIONS  
The MDmesh™ family is very suitable for increas-  
ing power density of high voltage converters allow-  
ing system miniaturization and higher efficiencies.  
Table 2: Order Codes  
SALES TYPE  
STB12NM50T4  
STB12NM50-1  
STP12NM50  
MARKING  
B12NM50  
B12NM50  
P12NM50  
P12NM50FP  
PACKAGE  
D²PAK  
PACKAGING  
TAPE & REEL  
TUBE  
I²PAK  
TO-220  
TO-220FP  
TUBE  
STP12NM50FP  
TUBE  
Rev. 2  
March 2005  
1/14  

STB12NM50T4 替代型号

型号 品牌 替代类型 描述 数据表
STB12NM50 STMICROELECTRONICS

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N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PA

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