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STB12NM50 PDF预览

STB12NM50

更新时间: 2024-01-05 13:07:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 651K
描述
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE

STB12NM50 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.4
Is Samacsys:N雪崩能效等级(Eas):400 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB12NM50 数据手册

 浏览型号STB12NM50的Datasheet PDF文件第2页浏览型号STB12NM50的Datasheet PDF文件第3页浏览型号STB12NM50的Datasheet PDF文件第4页浏览型号STB12NM50的Datasheet PDF文件第5页浏览型号STB12NM50的Datasheet PDF文件第6页浏览型号STB12NM50的Datasheet PDF文件第7页 
STP12NM50FD-STP12NM50FDFP-STW14NM50FD  
STB12NM50FD - STB12NM50FD-1  
N-CHANNEL500V-0.32-12ATO-220/FP/D2PAK/I2PAK/TO-247  
FDmesh™ Power MOSFET (with FAST DIODE)  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP12NM50FD  
STP12NM50FDFP 500 V  
STB12NM50FD  
STB12NM50FD-1  
STW14NM50FD  
500 V  
< 0.4 Ω  
< 0.4 Ω  
< 0.4 Ω  
< 0.4 Ω  
< 0.4 Ω  
12 A  
12 A  
12 A  
12 A  
14 A  
160 W  
35 W  
160 W  
160 W  
175 W  
500 V  
500 V  
500 V  
3
2
1
3
2
TYPICAL R (on) = 0.32 Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
1
TO-220  
TO-220FP  
TO-247  
3
1
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
3
2
1
2
2
I PAK  
D PAK  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
The FDmesh™ associates all advantages of re-  
duced on-resistance and fast switching with an in-  
trinsic fast-recovery body diode. It is therefore  
strongly recommended for bridge topologies, in par-  
ticular ZVS phase-shift converters.  
APPLICATIONS  
ZVS PHASE-SHIFT FULL BRIDGE  
CONVERTERS FOR SMPS AND WELDING  
EQUIPMENT  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P12NM50FD  
P12NM50FDFP  
B12NM50FD  
PACKAGE  
TO-220  
PACKAGING  
TUBE  
STP12NM50FD  
STP12NM50FDFP  
STB12NM50FD  
TO-220FP  
TUBE  
2
TUBE  
D PAK  
2
STB12NM50FDT4  
STB12NM50FD-1  
STW14NM50FD  
B12NM50FD  
B12NM50FD  
W14NM50FD  
TAPE & REEL  
TUBE  
D PAK  
2
I PAK  
TO-247  
TUBE  
June 2002  
1/14  

STB12NM50 替代型号

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