Datasheet > STB12NM50N_08

STB12NM50N_08

更新时间： 2024-02-07 04:42:45

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	589K
描述
N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

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中文翻译

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数据手册

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STB12NM50N_08 数据手册

STB12NM50N,STD12NM50N,STI12NM50N

STF12NM50N, STP12NM50N

N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET

TO-220 - DPAK - D²PAK - I²PAK - TO-220FP

Features

V_DSS

(@Tjmax)

R_DS(on)

max

Type

I_D

STB12NM50N

STD12NM50N

STI12NM50N

STF12NM50N

STP12NM50N

550 V

0.38 Ω

11 A

I²PAK

TO-220

11 A

11 A ⁽¹⁾

DPAK

11 A

■ 100% avalanche tested

D²PAK

TO-220FP

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

Figure 1.

Internal schematic diagram

■ Switching applications

Description

This series of devices is realized with the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB12NM50N

STD12NM50N

STI12NM50N

STF12NM50N

STP12NM50N

B12NM50N

D12NM50N

I12NM50N

F12NM50N

P12NM50N

D²PAK

DPAK

Tape and reel

Tube

I²PAK

TO-220FP

TO-220

Tube

July 2008

Rev 8

1/19

www.st.com

12 3 4 5 6 7...19

中文翻译

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