是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 400 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (Abs) (ID): | 10.5 A | 最大漏极电流 (ID): | 10.5 A |
最大漏源导通电阻: | 0.75 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 190 W | 最大脉冲漏极电流 (IDM): | 42 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB12NK80Z_07 | STMICROELECTRONICS |
获取价格 |
N-channel 800V - 0.65ヘ - 10.5A - TO-220 - D2P | |
STB12NK80Z-S | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET | |
STB12NK80ZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power | |
STB12NM50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PA | |
STB12NM50-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET | |
STB12NM50FD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PA | |
STB12NM50FD_06 | STMICROELECTRONICS |
获取价格 |
N-channel 500V - 0.32ヘ - 12A - TO-220/FP - D2 | |
STB12NM50FD-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PA | |
STB12NM50FDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PA | |
STB12NM50N | STMICROELECTRONICS |
获取价格 |
N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2 |