Datasheet > SSW-208

SSW-208

更新时间： 2024-10-27 21:53:43

品牌	Logo	应用领域
STANFORD		开关光电二极管
页数	文件大小	规格书
2页	82K
描述
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch

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中文翻译

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SSW-208 数据手册

Product Description

SSW-208

Stanford Microdevices’ SSW-208 is a high perfomance

Gallium Arsenide Field Effect Transistor MMIC switch

housed in a low-cost surface-mountable small outline

plastic package.

DC-4 GHz, High Isolation

GaAs MMIC SPDT Switch

This single-pole, double-throw, non-reflective switch

consumes less than 50uA and operates at -5V and 0V for

control bias. Its high isolation and low insertion loss makes

it ideal for T/R switching in analog and digital wireless

communication systems.

The die is fabricated using 0.5 micron FET process with

gold metallization and silicon nitride passivation to achieve

excellent performance and reliability.

Product Features

• High Isolation: 22dB at 2GHz

• Low DC Power Consumption

Isolation vs. Frequency

VControl = -5 V

-20

-30

-40

• Low Insertion Loss: 0.9dB at 2GHz

• Broad Performance - True DC Operation

• Low Cost Small Outline Plastic Package

-50

-60

-70

Applications

• Analog/Digital Wireless System

• Spread Spectrum

• GPS

GHz

Electrical Specifications at Ta = 25C

S y m b o l

P a ra m e te rs : Te s t C o n d itio n s

U n its

M in .

Ty p .

M a x .

Ins

Insertion Lo ss

f = 0.05-1 .0G H z

f = 1.00-2 .0G H z

f = 2.00-4 .0G H z

0.8

0.9

1.4

1.3

1.4

Isol

Isolation

f = 0.05-1 .0G H z

f = 1.00-2 .0G H z

f = 2.00-4 .0G H z

V S W R on

Input & O utp ut V S W R

(on or low lo ss state)

f = 0.05-1 .0G H z

f = 1.00-2 .0G H z

f = 2.00-4 .0G H z

1.15

1.25

1.50

P 1dB

TO IP

O utput P ow er at 1dB C om pression

f = 0.5-4.0 G H z

V = -5V

V = -8V

dB m

+26

+29

T hird O rder Intercep t P oint

f = 0.5-4.0 G H z

V = -5V

V = -8V

dB m

+45

+48

D evice C urrent

Isw

S w itching S peed

nsec

50% contro l to 10% /90% R F

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

7-13

中文翻译

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与SSW-208相关器件

型号	品牌	获取价格	描述	数据表
SSW224	STANFORD	获取价格	DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
SSW-224	STANFORD	获取价格	DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
SSW2N60A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 2A I(D) \| TO-263AB
SSW2N60ATM	FAIRCHILD	获取价格	暂无描述
SSW2N60B	FAIRCHILD	获取价格	600V N-Channel MOSFET
SSW2N60BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
SSW2N80A	FAIRCHILD	获取价格	Advanced Power MOSFET
SSW2N80ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SSW2N90A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 2A I(D) \| TO-263AB
SSW3/2N	ETC	获取价格	PHOTOVOLTAIC SOLAR CELL

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