Datasheet > SSW4N80ASTM

SSW4N80ASTM

更新时间： 2024-10-28 21:11:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	354K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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SSW4N80ASTM 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
配置：	Single	最大漏极电流 (Abs) (ID)：	4.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	130 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SSW4N80ASTM 数据手册

SSW/I4N80AS

Advanced Power MOSFET

FEATURES

BV_DSS= 800 V

R_DS(on)= 3.0 W

I_D= 4.5 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 mA (Max.) @ V_DS= 800V

Low R_DS(ON): 2.450 W (Typ.)c

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

800

4.5

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

2.8

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

324

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

2.0

3.1

130

1.04

Total Power Dissipation (T_C=25 C)

P_D

T_J, T_STG

T_L

Linear Derating Factor

W/ C

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

- 55 to +150

Purposes, 1/8“ from case for 5-seconds

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R _q

Junction-to-Case

0.96

R _q

Junction-to-Ambient

C /W

R _q

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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