Datasheet > SSW-524

SSW-524

更新时间： 2024-10-27 22:21:19

品牌	Logo	应用领域
STANFORD		开关射频微波
页数	文件大小	规格书
3页	199K
描述
DC - 8 GHZ GAAS MMIC SPST SWITCH

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中文翻译

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SSW-524 数据手册

Preliminary

Product Description

Stanford Microdevices SSW-524 is a high performance

Gallium Arsenide Field Effect Transistor MMIC switch housed

in a low-cost surface-mountable 8-pin ceramic package.

SSW-524

DC-8 GHz GaAs MMIC

SPST Switch

This single-pole, single-throw, non-reflective switch con-

sumes less than 50uA and operates at -5V and 0V for control

bias. P1db at -5V is +25dBm typical and can be increased to

+28dBm with -8V supply.

The die is fabricated using 0.5 micron FET process with gold

metallization and silicon nitride passivation to achieve

excellent performance and reliability.

Product Features

High Isolation : 40dB at 2GHz, 30dB at 8GHz

Low DC Power Consumption

Low Insertion Loss : 0.9dB at 2GHz

Non-Reflective (50 Ohm termination) when

Isolated

Isolation vs. Frequency

VControl = -5 V

-20

Low Cost Surface-Mountable Ceramic Package

-30

dB -40

-50

Applications

Analog/Digital Wireless Communications

AMPS, PCS, DEC and GSM

-60

GHz

Electrical Specifications at Ta = 25C

Parameters & Test Conditions:

Symbol

Units

Min.

Typ.

Max.

Zo = 50 ohms, V_Control= -5V, Ta = 25^oC

Ins

Insertion Loss

f = 0.05-2.0 GHz

f = 2.0-6.0 GHz

f = 6.0-8.0 GHz

0.9

1.5

1.8

1.3

1.9

Isol

Isolation

f = 0.05-2.0 GHz

f = 2.0-6.0 GHz

f = 6.0-8.0 GHz

VSWR on

VSWR off

Input & Output VSWR

(on or low loss state)

f = 0.05-2.0 GHz

f = 2.0-6.0 GHz

f = 6.0-8.0 GHz

1.3:1

1.5:1

1.7:1

Input & Output VSWR

(off or isolated state)

f = 0.05-2.0 GHz

f = 2.0-6.0 GHz

f = 6.0-8.0 GHz

1.3:1

1.5:1

1.7:1

P1dB

TOIP

Output Power at 1dB Compression

at 2 GHz

V = -5V

V = -8V

dBm

+25

+28

Third Order Intercept Point

V = -5V

V = -8V

dBm

+44

+47

Device Current

Isw

Switching Speed

nsec

10% to 90% or 90% to 10%

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101286 Rev B

12 3

中文翻译

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与SSW-524相关器件

型号	品牌	获取价格	描述	数据表
SSW5N60A	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SSW5N80A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5A I(D) \| TO-263AB
SSW5N80ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SSW5N90A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 5A I(D) \| TO-263AB
SSW60N05	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 60A I(D) \| TO-252VAR
SSW60N06	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-252VAR
SSW6N70A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 700V V(BR)DSS \| 6A I(D) \| TO-263AB
SSW7N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
SSW7N60A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 7A I(D) \| TO-263AB
SSW7N60ATM	FAIRCHILD	获取价格	暂无描述

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