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SSW5N60A PDF预览

SSW5N60A

更新时间: 2024-10-28 20:18:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 231K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SSW5N60A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):4.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

SSW5N60A 数据手册

 浏览型号SSW5N60A的Datasheet PDF文件第2页浏览型号SSW5N60A的Datasheet PDF文件第3页浏览型号SSW5N60A的Datasheet PDF文件第4页浏览型号SSW5N60A的Datasheet PDF文件第5页浏览型号SSW5N60A的Datasheet PDF文件第6页浏览型号SSW5N60A的Datasheet PDF文件第7页 
SSW/I5N60A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 600 V  
RDS(on) = 2.2Ω  
ID = 4.5 A  
! Avalanche Rugged Technology  
! Rugged Gate Oxide Technology  
! Lower Input Capacitance  
! Improved Gate Charge  
! Extended Safe Operating Area  
! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V  
! Lower RDS(ON) : 1.81Ω (Typ.)  
D2-PAK  
I2-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
600  
4.5  
Units  
VDSS  
V
Continuous Drain Current (TC=25)  
Continuous Drain Current (TC=100)  
Drain Current-Pulsed  
ID  
A
2.8  
IDM  
VGS  
EAS  
IAR  
18  
A
V
Gate-to-Source Voltage  
±30  
331  
4.5  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25)  
Linear Derating Factor  
11  
mJ  
V/ns  
W
3.0  
110  
0.88  
PD  
TJ , TSTG  
TL  
W/℃  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Junction-to-Case  
Case-to-Sink *  
Typ.  
Max.  
1.14  
40  
Units  
--  
--  
--  
RθJA  
/W  
RθJA  
Junction-to-Ambient  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. A  

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