Datasheet > SSW3N80A

SSW3N80A

更新时间： 2024-10-27 23:34:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	376K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-263AB

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数据手册

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SSW3N80A 数据手册

SSW/I3N80A

Advanced Power MOSFET

FEATURES

BV_DSS= 800 V

R_DS(on)= 4.8 W

I_D= 3 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 mA (Max.) @ V_DS= 800V

Low R_DS(ON): 3.800 W (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

800

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

1.9

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

240

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

2.0

3.1

100

0.8

Total Power Dissipation (T_A=25 C)

P_D

Total Power Dissipation (T_C=25 C)

Linear Derating Factor

W/ C

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +150

300

Maximum Lead Temp. for Soldering

Purposes, 1/8“ from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Case-to-Sink

Typ.

Max.

1.25

Units

R _q

C/W

R _q

62.5

Junction-to-Ambient

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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