是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.77 | Is Samacsys: | N |
FET 技术: | JUNCTION | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSTJ211T-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, | |
SSTJ211TT1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A | |
SSTJ211TT2 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, | |
SSTJ211TT2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A | |
SSTJ211TT2-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A | |
SSTJ212 | CALOGIC |
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N-Channel JFET | |
SSTJ212-E3 | VISHAY |
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Transistor | |
SSTJ212-T1 | VISHAY |
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Transistor | |
SSTJ212-T1-E3 | VISHAY |
获取价格 |
Transistor | |
SSTJ212T-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, |