5秒后页面跳转
SSTJ212-E3 PDF预览

SSTJ212-E3

更新时间: 2024-11-07 14:44:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 55K
描述
Transistor

SSTJ212-E3 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Is Samacsys:N
FET 技术:JUNCTIONJESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

SSTJ212-E3 数据手册

 浏览型号SSTJ212-E3的Datasheet PDF文件第2页浏览型号SSTJ212-E3的Datasheet PDF文件第3页浏览型号SSTJ212-E3的Datasheet PDF文件第4页浏览型号SSTJ212-E3的Datasheet PDF文件第5页浏览型号SSTJ212-E3的Datasheet PDF文件第6页浏览型号SSTJ212-E3的Datasheet PDF文件第7页 
J/SSTJ210 Series  
Vishay Siliconix  
N-Channel JFETs  
J210  
J211  
J212  
SSTJ211  
SSTJ212  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)  
J210  
–1 to –3  
–2.5 to –4.5  
–4 to –6  
–25  
–25  
–25  
4
6
7
2
7
J/SSTJ211  
J/SSTJ212  
15  
FEATURES  
BENEFITS  
APPLICATIONS  
D Excellent High Frequency Gain:  
D Wideband High Gain  
D High-Frequency Amplifier/Mixer  
D Oscillator  
J211/212, Gps 12 dB (typ) @ 400 MHz  
D Very High System Sensitivity  
D High Quality of Amplification  
D High-Speed Switching Capability  
D Very Low Noise: 3 dB (typ) @  
D Sample-and-Hold  
400 MHz  
D Very Low Capacitance Switches  
D Very Low Distortion  
D High-Quality Low-Level Signal  
D High ac/dc Switch Off-Isolation  
D High Gain: AV = 35 @ 100 mA  
Amplification  
DESCRIPTION  
The J/SSTJ210 Series n-channel JFETs are general-purpose  
and high-frequency amplifiers for a wide range of applications.  
These devices feature low leakage (IGSS < 100 pA).  
capability. The J/SSTJ210 Series is available in tape-and-reel  
for automated assembly (see Packaging Information).  
The TO-226AA (TO-92) plastic package, provides low cost  
while the TO-236 (SOT-23) package provides surface-mount  
For similar dual products, see the 2N5911/5912 and U440/441  
data sheets.  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
3
D
S
D
1
2
3
G
SSTJ211 (Z1)*  
SSTJ212 (Z2)*  
S
G
J210  
J211  
J212  
*Marking Code for TO-236  
Top View  
Top View  
For applications information see AN104.  
Document Number: 70234  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  

SSTJ212-E3 替代型号

型号 品牌 替代类型 描述 数据表
PMBFJ310 NXP

功能相似

N-channel silicon field-effect transistors

与SSTJ212-E3相关器件

型号 品牌 获取价格 描述 数据表
SSTJ212-T1 VISHAY

获取价格

Transistor
SSTJ212-T1-E3 VISHAY

获取价格

Transistor
SSTJ212T-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,
SSTJ212TT1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
SSTJ212TT1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
SSTJ212TT2 TEMIC

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,
SSTJ212TT2-E3 VISHAY

获取价格

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, TO-236, 3 PIN, FET Gene
SSTK EIC

获取价格

SURFACE MOUNT SUPER FAST RECTIFIERS
SSTK SYNSEMI

获取价格

SURFACE MOUNT SUPER FAST RECTIFIERS
SSTL16857 NXP

获取价格

14-bit SSTL_2 registered driver with differential clock inputs