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SST49LF016C-33-4C-EI PDF预览

SST49LF016C-33-4C-EI

更新时间: 2024-10-27 20:01:47
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
42页 512K
描述
Flash, 2MX8, 11ns, PDSO40, 10 X 20 MM, MO-142CD, TSOP1-40

SST49LF016C-33-4C-EI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1,
针数:40Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.49最长访问时间:11 ns
JESD-30 代码:R-PDSO-G40长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:10
宽度:10 mmBase Number Matches:1

SST49LF016C-33-4C-EI 数据手册

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16 Mbit LPC Firmware Flash  
SST49LF016C  
016C16Mb LPC Firmware Flash  
Advance Information  
FEATURES:  
Organized as 2M x8 (16 Mbit)  
Conforms to Intel® LPC Interface Specification v1.1  
Security ID Feature  
– 256-bit Secure ID space  
- 64-bit Unique Factory Pre-programmed  
Device Identifier  
- 192-bit User-Programmable OTP  
– Support Multi-Byte Firmware Memory Read/  
Write Cycles and Single Byte LPC Memory  
Read/Write cycles  
Superior Reliability  
Single 3.0-3.6V Read and Write Operations  
LPC Mode  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– 5-signal LPC bus interface for both in-system  
and factory programming using programmer  
equipment  
– Multi-Byte Read capability allowing 15.7MB/s  
data transfer rate @ 33MHz PCI clock  
- Firmware Memory Read cycle supporting  
1,2,4,16 and 128 Byte Read  
Low Power Consumption  
– Active Read Current: 12 mA (typical)  
– Standby Current: 10 µA (typical)  
Uniform 4 KByte sectors  
– 35 Overlay Blocks: one 16-KByte Boot Block,  
two 8-KByte Parameter Blocks, one 32-Kbyte  
Parameter Block, thirty-one 64-KByte Main  
Blocks.  
- Firmware Memory Write cycle supporting  
1,2 and 4 Byte Write  
– 33 MHz clock frequency operation  
– WP#/AAI and TBL# pins provide hardware Write  
protect for entire chip and/or top Boot Block  
– Block Locking Registers for individual block Read-  
Lock, Write-Lock, and Lock-Down protection  
– 5 GPI pins for system design flexibility  
– 4 ID pins for multi-chip selection  
– Multi-Byte capability registers  
Fast Sector-Erase/Program Operation  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Program Time: 7 µs (typical)  
Auto Address Increment (AAI) for Rapid Factory  
Programming (High Voltage Enabled)  
– RY/BY# pin for End-of-Write detection  
– Multi-Byte Program  
– Chip Rewrite Time: (typical)  
- SST49LF016C: 4 seconds  
(read-only registers)  
– Status register for End-of-Write detection  
– Program-/Erase-Suspend  
Read or Write to other blocks during  
Program-/Erase-Suspend  
Packages Available  
– 32-lead PLCC  
Two-cycle Command Set  
– 32-lead TSOP (8mm x 14mm)  
– 40-lead TSOP (10mm x 20mm)  
– Non-Pb (lead-free) packages available  
PRODUCT DESCRIPTION  
The SST49LF016C flash memory device is designed to  
interface with host controllers (chipsets) that support a low-  
pin-count (LPC) interface for BIOS applications. The  
SST49LF016C device complies with Intel’s LPC Interface  
Specification 1.1, supporting Multi-Byte Firmware Memory  
Read/Write and LPC Memory Read/Write cycle types.  
ity to use new security techniques and implement a new  
data protection scheme. The SST49LF016C also provides  
general purpose inputs (GPI) for system design flexibility.  
The SST49LF016C flash memory device is manufactured  
with SST’s proprietary, high-performance SuperFlash tech-  
nology. The split-gate cell design and thick-oxide tunneling  
injector attain greater reliability and manufacturability com-  
pared with alternative technology approaches. The  
SST49LF016C device significantly improves performance  
and reliability, while lowering power consumption. The  
SST49LF016C device writes (Program or Erase) in-system  
with a single 3.0-3.6V power supply. It uses less energy  
during Erase and Program than alternative flash memory  
technologies. The total energy consumed is a function of  
the applied voltage, current and time of application. Since  
for any given voltage range, the SuperFlash technology  
The SST49LF016C uses a 5-signal LPC interface to sup-  
port both in-system and rapid factory programming using  
programmer equipment. A high voltage pin (WP#/AAI) is  
used to enable Auto Address Increment (AAI) mode. The  
SST49LF016C offers hardware block protection in addition  
to individual block protection via software registers for critical  
system code and data. A 256-bit Security ID space with a  
64-bit factory pre-programmed unique number and a 192-  
bit user programmable OTP area enhances the user’s abil-  
©2004 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
Intel is a registered trademark of Intel Corporation.  
S71237-03-000  
1
12/04  
These specifications are subject to change without notice.  

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