2 Megabit LPC Flash
SST49LF020
SST49LF0202 Mb LPC Flash
Advance Information
FEATURES:
•
Standard LPC Interface
•
•
Two Operational Modes
– Low Pin Count (LPC) Interface mode for
in-system operation
– Parallel Programming (PP) Mode for fast production
– Conforms to Intel LPC Interface Specification 1.0
Organized as 256K x8
•
•
Flexible Erase Capability
programming
– Uniform 4 KByte sectors
LPC Interface Mode
– Uniform 16 KByte overlay blocks
– 16 KBytes Top boot block protection
– Chip-Erase for PP Mode
– 5-signal communication interface supporting
byte Read and Write
– 33 MHz clock frequency operation
– WP# and TBL# pins provide hardware write protect
for entire chip and/or top boot block
– Standard SDP Command Set
– Data# Polling and Toggle Bit for
End-of-Write detection
•
•
Single 3.0-3.6V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
•
•
Low Power Consumption
– 5 GPI pins for system design flexibility
– Active Read Current: 10 mA (typical)
– Standby Current: 10 µA (typical)
•
Parallel Programming (PP) Mode
– 11 pin multiplexed address and
8 pin data I/O interface
– Supports fast In-System or PROM programming
for manufacturing
Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time: 4 seconds (typical)
– Single-pulse Program or Erase
– Internal timing generation
•
•
CMOS I/O Compatibility
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST49LF020 flash memory device is designed to
interface with the LPC bus for PC and Internet Applicance
applications. It provides protection for the storage and
update of code and data in addition to adding system
design flexibility through five General Purpose Inputs (GPI).
The SST49LF020 is in compliance with Intel Low Pin
Count (LPC) Interface Specification 1.0. Two interface
modes are supported: LPC Mode for In-System program-
ming and Parallel Programming (PP) Mode for fast factory
programming.
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program
operation is less than alternative flash memory technolo-
gies. The SST49LF020 product provides a maximum
Byte-Program time of 20µsec. The entire memory can be
erased and programmed byte-by-byte typically in 4 sec-
onds, when using status detection features such as Tog-
gle Bit or Data# Polling to indicate the completion of
Program operation. The SuperFlash technology provides
fixed Erase and Program time, independent of the num-
ber of Erase/Program cycles that have performed. There-
fore the system software or hardware does not have to
be calibrated or correlated to the cumulative number of
Erase/Program cycles as is necessary with alternative
flash memory technologies, whose Erase and Program
time increase with accumulated Erase/Program cycles.
The SST49LF020 flash memory device is manufactured
with SST’s proprietary, high performance SuperFlash
Technology. The split-gate cell design and thick oxide
tunneling injector attain better reliability and manufactura-
bility compared with alternate approaches. The
SST49LF020 device significantly improves performance
and reliability, while lowering power consumption. The
SST49LF020 device writes (Program or Erase) with a
single 3.0-3.6V power supply. It uses less energy during
Erase and Program than alternative flash memory tech-
nologies. The total energy consumed is a function of the
applied voltage, current and time of application. Since for
any give voltage range, the SuperFlash technology uses
To protect against inadvertent write, the SST49LF020
device has on-chip hardware and software data (SDP)
protection schemes. It is offered with a typical endurance
of 100,000 cycles. Data retention is rated at greater than
100 years.
©2001 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
S71175-02-000 5/01
1
526
MPF is a trademark of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation.
These specifications are subject to change without notice.
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