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SST49LF008A-33-4C-NHE

更新时间： 2024-10-27 04:02:39
品牌 Logo 应用领域
SST 内存集成电路PC
页数 文件大小 规格书
42页 544K
描述
8 Mbit Firmware Hub

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SST49LF008A-33-4C-NHE 数据手册

 浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第2页浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第3页浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第4页浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第5页浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第6页浏览型号SST49LF008A-33-4C-NHE的Datasheet PDF文件第7页 
8 Mbit Firmware Hub  
SST49LF008A  
SST49LF008A8 Mb Firmware Hub for Intel 8xx Chipsets  
Data Sheet  
FEATURES:  
•
•
Firmware Hub for Intel 8xx Chipsets  
8 Mbit SuperFlash memory array for code/data  
storage  
– 1024K x8  
Flexible Erase Capability  
•
•
Two Operational Modes  
– Firmware Hub Interface (FWH) Mode for  
In-System operation  
– Parallel Programming (PP) Mode for fast  
production programming  
Firmware Hub Hardware Interface Mode  
– 5-signal communication interface supporting  
byte Read and Write  
– 33 MHz clock frequency operation  
– WP# and TBL# pins provide hardware write  
protect for entire chip and/or top Boot Block  
– Block Locking Register for all blocks  
– Standard SDP Command Set  
– Data# Polling and Toggle Bit for End-of-Write  
detection  
– 5 GPI pins for system design flexibility  
– 4 ID pins for multi-chip selection  
Parallel Programming (PP) Mode  
– 11-pin multiplexed address and  
8-pin data I/O interface  
– Supports fast In-System or PROM programming  
for manufacturing  
CMOS and PCI I/O Compatibility  
Packages Available  
– 32-lead PLCC  
•
– Uniform 4 KByte Sectors  
– Uniform 64 KByte overlay blocks  
– 64 KByte Top Boot Block protection  
– Chip-Erase for PP Mode Only  
•
•
Single 3.0-3.6V Read and Write Operations  
Superior Reliability  
– Endurance:100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Read Current: 6 mA (typical)  
– Standby Current: 10 µA (typical)  
•
•
•
Fast Sector-Erase/Byte-Program Operation  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time: 15 seconds (typical)  
– Single-pulse Program or Erase  
– Internal timing generation  
•
•
– 32-lead TSOP (8mm x 14mm)  
– 40-lead TSOP (10mm x 20mm)  
– Non-Pb (lead-free) packages available  
•
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST49LF008A flash memory devices are designed to  
be read-compatible with the Intel 82802 Firmware Hub  
(FWH) device for PC-BIOS application. These devices pro-  
vide protection for the storage and update of code and data  
in addition to adding system design flexibility through five  
general purpose inputs. Two interface modes are sup-  
ported by the SST49LF008A: Firmware Hub (FWH) Inter-  
face mode for in-system programming and Parallel  
Programming (PP) mode for fast factory programming of  
PC-BIOS applications.  
The SST49LF008A devices write (Program or Erase) with  
a single 3.0-3.6V power supply. They use less energy dur-  
ing Erase and Program than alternative flash memory tech-  
nologies. The total energy consumed is a function of the  
applied voltage, current and time of application. Since for  
any given voltage range, the SuperFlash technology uses  
less current to program and has a shorter Erase time, the  
total energy consumed during any Erase or Program oper-  
ation is less than alternative flash memory technologies.  
The SST49LF008A products provide a maximum Byte-  
Program time of 20 µsec. The entire memory can be  
erased and programmed byte-by-byte typically in 15 sec-  
onds when using status detection features such as Toggle  
Bit or Data# Polling to indicate the completion of Program  
operation. The SuperFlash technology provides fixed Erase  
and Program times independent of the number of Erase/  
Program cycles performed. Therefore the system software  
The SST49LF008A flash memory devices are manufac-  
tured with SST’s proprietary, high performance SuperFlash  
technology. The split-gate cell design and thick-oxide tun-  
neling injector attain better reliability and manufacturability  
compared with alternate approaches. The SST49LF008A  
devices significantly improve performance and reliability,  
while lowering power consumption.  
©2006 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Intel is a registered trademark of Intel Corporation.  
S71161-11-000  
1
3/06  
These specifications are subject to change without notice.  
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SST49LF008A-33-4C-NHE 替代型号

型号 品牌 替代类型 描述 数据表
M27C801-90K1X STMICROELECTRONICS

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