Datasheet > SST27SF512-70-3C-WHE

SST27SF512-70-3C-WHE

更新时间： 2024-11-08 04:30:43

品牌	Logo	应用领域
SST		/
页数	文件大小	规格书
23页	327K
描述
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

SST27SF512 / SST27SF010 / SST27SF020

SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8

4.5-5.5V Read Operation

•

Fast Byte-Program Operation

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

Superior Reliability

1.4 seconds (typical) for SST27SF512

2.8 seconds (typical) for SST27SF010

5.6 seconds (typical) for SST27SF020

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Low Power Consumption

•

Electrical Erase Using Programmer

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

Fast Read Access Time

•

TTL I/O Compatibility

– 70 ns

JEDEC Standard Byte-wide EPROM Pinouts

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 28-pin PDIP for SST27SF512

– 32-pin PDIP for SST27SF010/020

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K

x8 CMOS, Many-Time Programmable (MTP) low cost

flash, manufactured with SST’s proprietary, high perfor-

mance SuperFlash technology. The split-gate cell design

and thick oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

These MTP devices can be electrically erased and pro-

grammed at least 1000 times using an external program-

mer with a 12V power supply. They have to be erased prior

to programming. These devices conform to JEDEC stan-

dard pinouts for byte-wide memories.

Device Operation

The SST27SF512/010/020 are a low cost flash solution

that can be used to replace existing UV-EPROM, OTP,

and mask ROM sockets. These devices are functionally

(read and program) and pin compatible with industry

standard EPROM products. In addition to EPROM func-

tionality, these devices also support electrical Erase

operation via an external programmer. They do not

require a UV source to erase, and therefore the pack-

ages do not have a window.

Featuring

high-performance

Byte-Program,

the

Read

SST27SF512/010/020 provide a Byte-Program time of 20

µs. Designed, manufactured, and tested for a wide spec-

trum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The Read operation of the SST27SF512/010/020 is con-

trolled by CE# and OE#. Both CE# and OE# have to be low

for the system to obtain data from the outputs. Once the

address is stable, the address access time is equal to the

delay from CE# to output (T_CE). Data is available at the out-

put after a delay of T_OEfrom the falling edge of OE#,

assuming that CE# pin has been low and the addresses

have been stable for at least T_CE-T_OE.When the CE# pin is

high, the chip is deselected and a typical standby current of

10 µA is consumed. OE# is the output control and is used

to gate data from the output pins. The data bus is in high

impedance state when either CE# or OE# is high.

The SST27SF512/010/020 are suited for applications that

require infrequent writes and low power nonvolatile stor-

age. These devices will improve flexibility, efficiency, and

performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST27SF512 are offered in 32-lead

PLCC, 32-lead TSOP, and 28-pin PDIP packages. The

SST27SF010/020 are offered in 32-pin PDIP, 32-lead

PLCC, and 32-lead TSOP packages. See Figures 1, 2, and

3 for pin assignments.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

S71152-11-000

9/05

These specifications are subject to change without notice.

12 3 4 5 6 7...23

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与SST27SF512-70-3C-WHE相关器件

型号	品牌	获取价格	描述	数据表
SST27SF512-70-3I-WH	SILICON	获取价格	EEPROM, 64KX8, 70ns, Parallel, CMOS, PDSO32
SST27SF512-90	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-NG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-NH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-NHE	MICROCHIP	获取价格	64K X 8 FLASH 12V PROM, 90 ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32
SST27SF512-90-3C-NHE	SILICON	获取价格	Flash, 64KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32
SST27SF512-90-3C-PG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-PH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-WG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-WH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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