Datasheet > SST27SF512-90-3C-NH

SST27SF512-90-3C-NH

更新时间： 2024-11-21 22:28:39

品牌	Logo	应用领域
SST		内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
26页	268K
描述
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8)

Many-Time Programmable Flash

SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020

SST27SF256 / 512 / 010 / 0205.0V-Read 256Kb / 512Kb / 1Mb / 2Mb (x8) MTP flash memories

Data Sheet

FEATURES:

•

Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8

4.5-5.5V Read Operation

•

Fast Byte-Program Operation

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

Superior Reliability

0.7 seconds (typical) for SST27SF256

1.4 seconds (typical) for SST27SF512

2.8 seconds (typical) for SST27SF010

5.6 seconds (typical) for SST27SF020

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

•

Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

Fast Read Access Time

– 70 ns

– 90 ns

•

TTL I/O Compatibility

JEDEC Standard Byte-wide EPROM Pinouts

Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 28-pin PDIP for SST27SF256/512

– 32-pin PDIP for SST27SF010/020

PRODUCT DESCRIPTION

The SST27SF256/512/010/020 are a 32K x8 / 64K x8 /

128K x8 / 256K x8 CMOS, Many-Time Programmable

(MTP) low cost flash, manufactured with SST’s proprietary,

high performance SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. These MTP devices can be electrically erased

and programmed at least 1000 times using an external pro-

grammer with a 12 volt power supply. They have to be

erased prior to programming. These devices conform to

JEDEC standard pinouts for byte-wide memories.

Device Operation

The SST27SF256/512/010/020 are a low cost flash solu-

tion that can be used to replace existing UV-EPROM, OTP,

and mask ROM sockets. These devices are functionally

(read and program) and pin compatible with industry stan-

dard EPROM products. In addition to EPROM functionality,

these devices also support electrical erase operation via an

external programmer. They do not require a UV source to

erase, and therefore the packages do not have a window.

Read

Featuring high performance Byte-Program, the

SST27SF256/512/010/020 provide a Byte-Program time of

20 µs. Designed, manufactured, and tested for a wide

spectrum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The Read operation of the SST27SF256/512/010/020 is

controlled by CE# and OE#. Both CE# and OE# have to be

low for the system to obtain data from the outputs. Once

the address is stable, the address access time is equal to

the delay from CE# to output (T_CE). Data is available at the

output after a delay of T_OEfrom the falling edge of OE#,

assuming that CE# pin has been low and the addresses

have been stable for at least T_CE- T_OE. When the CE# pin

is high, the chip is deselected and a typical standby current

of 10 µA is consumed. OE# is the output control and is

used to gate data from the output pins. The data bus is in

high impedance state when either CE# or OE# is high.

The SST27SF256/512/010/020 are suited for applications

that require infrequent writes and low power nonvolatile

storage. These devices will improve flexibility, efficiency,

and performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST27SF256/512 are offered in 32-pin

PLCC, 32-pin TSOP, and 28-pin PDIP packages. The

SST27SF010/020 are offered in 32-pin PDIP, 32-pin PLCC

and 32-pin TSOP packages. See Figures 1, 2, and 3 for

pinouts.

Byte-Program Operation

The SST27SF256/512/010/020 are programmed by using

an external programmer. The programming mode for

SST27SF256/010/020 is activated by asserting 12V (±5%)

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

S71152-02-000 5/01

502

These specifications are subject to change without notice.

12 3 4 5 6 7...26

中文翻译

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与SST27SF512-90-3C-NH相关器件

型号	品牌	获取价格	描述	数据表
SST27SF512-90-3C-NHE	MICROCHIP	获取价格	64K X 8 FLASH 12V PROM, 90 ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32
SST27SF512-90-3C-NHE	SILICON	获取价格	Flash, 64KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, MO-016AE, LCC-32
SST27SF512-90-3C-PG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-PH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-WG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-WH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-WHE	MICROCHIP	获取价格	64K X 8 FLASH 12V PROM, 90 ns, PDSO32, 8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32
SST27SF512-90-3C-WHE	SILICON	获取价格	Flash, 64KX8, 90ns, PDSO32, 8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32
SST27SF512-90-3I-NH	SILICON	获取价格	EEPROM, 64KX8, 90ns, Parallel, CMOS, PQCC32
SST27SF512-90-3I-WH	SILICON	获取价格	EEPROM, 64KX8, 90ns, Parallel, CMOS, PDSO32

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