Datasheet > SST27VF020

SST27VF020

更新时间： 2024-11-22 03:09:51

品牌	Logo	应用领域
SST		/
页数	文件大小	规格书
18页	587K
描述
1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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SST27VF020 数据手册

1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

SST27VF010 / SST27VF020

SST27VF010 / 0205.0V-Read 1Mb / 2Mb (x8) MTP flash memories

Preliminary Specifications

FEATURES:

•

Organized as 128K x8 / 256K x8

2.7-3.6V Read Operation

Superior Reliability

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Fast Byte-Program Operation

– Byte-Program Time: 15 µs (typical)

– Chip Program Time:

2 seconds (typical) for SST27VF010

4 seconds (typical) for SST27VF020

Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

•

Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 2 µA (typical)

•

JEDEC Standard Byte-wide EPROM Pinouts

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

Fast Read Access Time

– 70 ns (PLCC or TSOP)

– 90 ns (PDIP)

PRODUCT DESCRIPTION

The SST27VF010/020 are 128K x8 / 256K x8 CMOS,

Many-Time Programmable (MTP) low cost flash, manufac-

tured with SST’s proprietary, high-performance SuperFlash

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. These MTP devices

can be electrically erased and programmed at least 1000

times using an external programmer with a 12V power sup-

ply. They have to be erased prior to programming. These

devices conform to JEDEC standard pinouts for byte-wide

memories.

Device Operation

The SST27VF010/020 are a low cost flash solution that

can be used to replace existing UV-EPROM, OTP, and

mask ROM sockets. These devices are functionally

(read and program) and pin compatible with industry

standard EPROM products. In addition to EPROM func-

tionality, these devices also support electrical Erase

operation via an external programmer. They do not

require a UV source to erase, and therefore the pack-

ages do not have a window.

Featuring high performance Byte-Program, the

SST27VF010/020 provide a Byte-Program time of 15 µs.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with an endurance

of at least 1000 cycles. Data retention is rated at greater

than 100 years.

Read

The Read operation of the SST27VF010/020 is controlled

by CE# and OE#. Both CE# and OE# have to be low for

the system to obtain data from the outputs. Once the

address is stable, the address access time is equal to the

delay from CE# to output (T_CE). Data is available at the out-

put after a delay of T_OEfrom the falling edge of OE#,

assuming that CE# pin has been low and the addresses

have been stable for at least T_CE-T_OE.When the CE# pin is

high, the chip is deselected and a typical standby current of

2 µA is consumed. OE# is the output control and is used to

gate data from the output pins. The data bus is in high

impedance state when either CE# or OE# is high.

The SST27VF010/020 are suited for applications that

require infrequent writes and low power nonvolatile stor-

age. These devices will improve flexibility, efficiency, and

performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST27VF010/020 are offered in 32-pin

PDIP, 32-lead PLCC, and 32-lead TSOP packages. See

Figures 1, 2, and 3 for pin assignments.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

S71251-00-000

12/03

These specifications are subject to change without notice.

12 3 4 5 6 7...18

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与SST27VF020相关器件

型号	品牌	获取价格	描述	数据表
SST27VF020-70-3C-NH	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27VF020-70-3C-NHE	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27VF020-70-3C-WH	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27VF020-70-3C-WHE	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27VF020-90-3C-PH	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27VF020-90-3C-PHE	SST	获取价格	1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST28SF040-150-3C-NH	SILICON	获取价格	Flash, 512KX8, 150ns, PQCC32
SST28SF040-150-4I-NH	SILICON	获取价格	Flash, 512KX8, 150ns, PQCC32
SST28SF040A	SST	获取价格	4 Mbit (512K x8) SuperFlash EEPROM
SST28SF040A_03	SST	获取价格	4 Mbit (512K x8) SuperFlash EEPROM

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