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SST28SF040A-120-4C-NH PDF预览

SST28SF040A-120-4C-NH

更新时间: 2024-09-18 22:25:07
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SST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
24页 321K
描述
4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A-120-4C-NH 数据手册

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4 Mbit (512K x8) SuperFlash EEPROM  
SST28SF040A / SST28VF040A  
SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memories  
Data Sheet  
FEATURES:  
Single Voltage Read and Write Operations  
Fast Read Access Time  
– 5.0V-only for SST28SF040A  
– 2.7-3.6V for SST28VF040A  
5.0V-only operation: 90 and 120 ns  
2.7-3.6V operation: 150 and 200 ns  
Superior Reliability  
Latched Address and Data  
Endurance: 100,000 Cycles (typical)  
Greater than 100 years Data Retention  
Hardware and Software Data Protection  
7-Read-Cycle-Sequence Software Data  
Memory Organization: 512K x8  
Protection  
Sector-Erase Capability: 256 Bytes per Sector  
Low Power Consumption  
End-of-Write Detection  
Toggle Bit  
Data# Polling  
Active Current: 15 mA (typical) for 5.0V and  
10 mA (typical) for 2.7-3.6V  
Standby Current: 5 µA (typical)  
TTL I/O Compatibility  
JEDEC Standard  
Fast Sector-Erase/Byte-Program Operation  
Flash EEPROM Pinouts  
Packages Available  
Byte-Program Time: 35 µs (typical)  
Sector-Erase Time: 2 ms (typical)  
Complete Memory Rewrite: 20 sec (typical)  
32-lead PLCC  
32-lead TSOP (8mm x 14mm and 8mm x 20mm)  
32-pin PDIP  
PRODUCT DESCRIPTION  
The SST28SF/VF040A are 512K x8 bit CMOS Sector-  
Erase, Byte-Program EEPROMs. The SST28SF/VF040A  
are manufactured using SSTs proprietary, high perfor-  
mance CMOS SuperFlash EEPROM Technology. The  
split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternative approaches. The SST28SF/VF040A erase and  
program with a single power supply. The SST28SF/  
VF040A conform to JEDEC standard pinouts for byte wide  
memories and are compatible with existing industry stan-  
dard flash EEPROM pinouts.  
cations, the SST28SF/VF040A significantly improve  
performance and reliability, while lowering power consump-  
tion when compared with floppy diskettes or EPROM  
approaches. Flash EEPROM technology makes possible  
convenient and economical updating of codes and control  
programs on-line. The SST28SF/VF040A improve flexibil-  
ity, while lowering the cost of program and configuration  
storage application.  
The functional block diagram shows the functional blocks of  
the SST28SF/VF040A. Figures 1, 2, and 3 show the pin  
assignments for the 32-lead PLCC, 32-lead TSOP, and 32-  
pin PDIP packages. Pin descriptions and operation modes  
are described in Tables 2 through 5.  
Featuring high performance programming, the SST28SF/  
VF040A typically Byte-Program in 35 µs. The SST28SF/  
VF040A typically Sector-Erase in 2 ms. Both Program and  
Erase times can be optimized using interface features such  
as Toggle bit or Data# Polling to indicate the completion of  
the Write cycle. To protect against an inadvertent write, the  
SST28SF/VF040A have on chip hardware and Software  
Data Protection schemes. Designed, manufactured, and  
tested for a wide spectrum of applications, the SST28SF/  
VF040A are offered with a guaranteed sector endurance of  
10,000 cycles. Data retention is rated greater than 100  
years.  
Device Operation  
Commands are used to initiate the memory operation func-  
tions of the device. Commands are written to the device  
using standard microprocessor write sequences. A com-  
mand is written by asserting WE# low while keeping CE#  
low. The address bus is latched on the falling edge of WE#  
or CE#, whichever occurs last. The data bus is latched on  
the rising edge of WE# or CE#, whichever occurs first.  
Note, during the Software Data Protection sequence the  
addresses are latched on the rising edge of OE# or CE#,  
whichever occurs first.  
The SST28SF/VF040A are best suited for applications that  
require reprogrammable nonvolatile mass storage of pro-  
gram, configuration, or data memory. For all system appli-  
©2001 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71077-04-000 6/01  
1
310  
These specifications are subject to change without notice.  

SST28SF040A-120-4C-NH 替代型号

型号 品牌 替代类型 描述 数据表
AM29F040-120JI AMD

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